Mailing Address:Department of Electrical and Computer Engineering
Florida Institute of Technology,
College of Engineering, 150 West University Boulevard, Melbourne,
Florida, 32901-6975 

E-mail address: earles@fit.edu
 

Biography

Dr Susan Earles is an Assistant Professor in Electrical and Computer Engineering at Florida Institute of Technology. She was awarded a PhD degree in 2002 in Electrical Engineering with a minor in Materials Science from the University of Florida, Gainsville where she worked under the supervision of Professor Mark Law. During her graduate study and now, Dr Earles works on understanding and modeling laser annealing to help develop ultrashallow junctions in silicon and improve the device properties of various types of semiconductors. She also has an MS and BS degree in Electrical Engineering from the University of Florida.

Dr Earles' research interests are in the areas of front-end processing of semiconductor devices. Some of her expertise and experience include: implantation, dopant/defect interaction, and alternative annealing techniques used in semiconductor processing such as laser annealing, low temperature processing, and microwave annealing. Laser annealing has also been investigated to improve surfaces in solar cells, quantum well structures, and biomaterials. She is working on modeling/simulation of the behavior of various materials and structures during processing and determination/modeling of properties which affect carrier mobility in various electronic materials. Her current research is sponsored through a NASA grant awarded to Florida Tech's Hydrogen Center headed by Dr. Mary Helen McCay.  This work involves the use of porous silicon to create efficient fuel cells for portable electronics and hydrogen sensors. 
Before coming to Florida Tech, Dr Earles has worked with groups at Intel, Bell Labs/Lucent, Motorola, and Texas Instrument.

Dr Earles is the director of the microelectronics fabrication laboratory at FIT.  Prior collaberation with AET (a local company), resulted in a research contract of U$ 70,000 with the Missile Defence Agency.  This work investigated using FLOOPS to model the materials processes needed for producing multicolor infrared sensors.

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Teaching

 
ECE3111 - Electronics, Fall 2005
ECE5301 – Semiconductor Device Theory, Spring 2006
ECE4311/5311 Microelectronics Fabrication Lab
ECE4330 IC Design Lab, Fall 2003 ^ top

Projects

 
2003 - 2004


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Publications

Refereed Journal Papers

2002 

  • Nonmelt laser annealing of 5KeV and 1KeV boron-implanted silicon


Earles SK, Law ME, Brindos RE, Jones KS, Talwar S, Corcoran S
IEEE Transactions on Electron Devices, Vol. 49, p1118-1123, July 2002.

  • Influence of the surface Si/buried oxide interface on extended defect evolution in silicon-on-insulator scaled to 300A


Saavedra AF, Frazer J, Jones KS, Avci I, Earles SK, Law ME, Jones EC
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures”, v 20, n 6, November/December, 2002, p 2243-2247.

1999 

  • Evolution of {311} type defects in boron-dped structures: Experimental evidence of boron-interstitial cluster formation


Lilak AD, Earles SK, Law ME, Jones KS
Applied Physics Letts., v74, n14, 1999, p 2038-2040.


Selected refereed Conference Papers

2001 

  • Effects of Nonmelt Laser Annealing on 1KeV Boron Implanted in Silicon


Earles SK, Law ME, Jones KS, Brindos RE, Talwar S, Corcoran S.
Materials Research Society Symposium Proceedings, Materials Research Society, Pittsburgh, PA, USA, Spring 2001.

2000 

  • Effects of Nonmelt Laser Annealing on 5KeV Boron Implanted in Silicon


Earles SK, Law ME, Jones KS, Brindos RE, Talwar S.
S. Materials Research Society Symposium Proceedings, Materials Research Society, Pittsburgh, PA, USA, Spring 2000.

  • Junction depth reduction of ion implanted boron in silicon through fluorine ion implantation


Robertson LS, Warnes PN, Jones KS, Earles SK, Law ME, Downey DF, Falk S, Liu
Materials Research Society, v610, 2000, p B4.2.1-B4.2.6.